Browsing by Author 권영석

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Showing results 1 to 18 of 18

Issue DateTitleAuthor(s)
2004-05Characteristics of Single Transistor type Ferroelectric Memory Using Pt/SrBi2Ta2O9/Si and Pt/SrBi2Ta2O9/Y2O3/Si Gate Structure김용태; 심선일; 박정호, et al
2004-02Development of Etch Stop Process by Using Selective Dry Etching of SrBi2Ta2O9/Y2O3심선일; 권영석; 김성일, et al
2006-04EFFECTS OF SCALED CONTACT DIMENSION ON PHASE CHANGE RANDOM ACCESS MEMORY김용태; 박유진; 권영석, et al
2004-12Etch stop characteristics of SrBi2Ta2O9 thin film by using CeO2 buffer layer권영석; 심선일; 김성일, et al
2004-03Etch stop Process of SrBi2Ta2O9 thin film using CeO2 buffer layer for self aligned ferroelectric gate structure권영석; 심선일; 김익수, et al
2003-11Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)심선일; 권영석; 김성일, et al
2003-11Fabrication and characterization of Pt/SrBi2Ta2O9(SBT)/CeO2/Si metal ferroelectric insulator semiconductor field effect transistor (MFISFET) memory by using the inductively coupled plasma reactive ion etching (ICP RIE) process심선일; 박정호; 권영석, et al
2004-09Fabrication of MFISFETs with Pt/SrBi2Ta2O9/Y2O3/Si gate structure by developing an etch-stop process심선일; 권영석; 김성일, et al
2006-09Ge-Te Chalcogenide Material for High-Speed Phase-Change Memory김용태; 권영석; 김은태, et al
2005-04HRTEM Study on the Atomic Arrangement of the Ge2Sb2Te5 Thin Films Deposited on SiO2/Si Substrates by Sputtering Method박유진; 이정용; 염민수, et al
2007-01Magnetic patterning of the Ni/Cu thin film by 40 keV O ion irradiation이종한; 신상원; 권영석, et al
2006-07Material and Electrical Characteristics of SbXTe100-X for Phase Change Random Access Memory김용태; 권영석; 염민수, et al
2005-03Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process심선일; 권영석; 김성일, et al
2004-04Multibit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure심선일; 권영석; 김익수, et al
2004-12Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure심선일; 권영석; 김익수, et al
2006-07Scaling of Phase Changing Volume Dimension and Material Issues on Phase Change Random Access Memory김용태; 염민수; 권영석, et al
2004-08Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure심선일; 권영석; 김성일, et al
2004-04Single transistor type ferroelectric memory with Pt/SrBi2Ta2O9/Pt/CeO2/Si MFMIS gate structure심선일; 권영석; 김익수, et al

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