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Showing results 1 to 30 of 70

Issue DateTitleAuthor(s)
2012-031-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current densityRena Suzuki; Noriyuki Taoka; M. Yokoyama, et al
2002-07A comparison of the microstructures of surface melted CU-wire.김영만; 박성우; 김상현, et al
2014-06A ferroelectric photocatalyst for enhancing hydrogen evolution: polarized particulate suspension박상백; 이찬우; 강민규, et al
2011-03AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP InterfacesNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2010-01Anaerobic Lipid Degradation Through Acidification and Methanization김이중; 김상현; 신항식, et al
2011-05Analysis on migration and activation of live macrophages on transparent flat and nanostructured titanium이소영; 최정일; 신상원, et al
2015-07Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage전우진; 라상호; 이웅규, et al
2013-10Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2012-07Characterization of Ni?GaSb Alloys Formed by Direct Reaction of Ni with GaSbCezar B. Zota; 김상현; Masafumi Yokoyama, et al
2014-04Comparison of nitrogen removal efficiency on process stability for granular and immobilized anammox bacteria최대희; 배효관; 정진영, et al
2014-07Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors김상현; Yuki Ikku; Masafumi Yokoyama, et al
2011-12Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2006-10Enhanced lipid degradation in upflow anaerobic sludge blanket reactor by integration with acidogenic reactor김상현; 김이중; 신항식
2015-07Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment김호성; 박민수; 김상현, et al
2017-02Epitaxial growth of strained germanium using InxAl1-xAs buffer layer김형준; 김상현; 주건우, et al
2013-07Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2014-06Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors김상현; Masafumi Yokoyama; Ryosho Nakene, et al
2015-09Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate김상현; 박민수; 금대명, et al
2014-08Fabrication of GaAs single junction solar cell on Si substrate김상현; 박민수; 금대명, et al
2017-08Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques최원준; 송진동; 김형준, et al
2011-01Fabrication of Metal Nanoparticles Using Hydroxylated Ionic Liquids이광원; 김상현; 한대희, et al
2018-02Fabrication of Ultra-low Dit(E) InGaAs MOSFETs최원준; 송진동; 김형준, et al
2013-05Formation of III-V-On-Insulator Structures on Si by Direct Wafer BondingMasafumi Yokoyama; Ryo Iida; Yuki Ikku, et al
2016-04Fully subthreshold current-based characterization of interface traps and surface potential in III?V-on-insulator MOSFETs최원준; 김상현; 김성광, et al
2015-10GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding김상현; 금대명; 박민수, et al
2017-02Growth temperature dependent Ge epitaxy on GaAs(100) substrate김형준; 김상현; 주건우, et al
2017-04Heterogeneously Integrated High-Performance GaAs Single-Junction Solar Cells on Copper최원준; 김상현; 박민수, et al
2015-07High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctionsMunetaka Noguchi; 김상현; Masafumi Yokoyama, et al
2013-04High Mobility CMOS Technologies using III-V/Ge Channels on Si platformShinichi Takagi; 김상현; Masafumi Yokoyama, et al
2011-10High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al