| 2006-03 | Co Ion-implanted GaN and its Magnetic Properties | 김우철; 강희재; 오석근, et al |
| 2003-10 | Doping density and operation voltage in qauntum dot IR photodetector | 이욱현; 강용훈; 엄준호, et al |
| 2003-08 | Far-infrared photodetectors utilizing quantum structure semiconductors: technology trend and prospects | 송진동; 최원준; 이정일, et al |
| 2004-03 | Growth characteristics of self-assembled InAs/GaAs quantum dots | 김형석; 서주형; 박찬경, et al |
| 2004-03 | High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier | 이상준; 노삼규; 최정우, et al |
| 2005-03 | In situ HREM study on the thermal stability of atomic layer epitaxy grown InAs/GaAs quantum dots | 김형석; J. H. Suh; 박찬경, et al |
| 2006-03 | Magnetic and Structural Properties of Co Ion-Implanted GaN | 김우철; 강희재; 오석근, et al |
| 2002-11 | Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing | 이창명; 노삼규; 이주인, et al |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | 이창명; 최석호; 김창수, et al |
| 2003-05 | Photoluminescence of the AlGaN/GaN heterostructure and two-dimensional electron gas | 이창명; 반승일; 노삼규, et al |
| 2006-07 | Structure and strain characteristics of self-assembled InAs/GaAs quantum dots investigated by transmission electron microscopy | 김형석; 서주형; 박찬경, et al |
| 2005-08 | Structure and thermal stability of atomic layer epitaxy grown InAs/GaAs (001) quantum dots | 김형석; 서주형; 박찬경, et al |
| 2005-11 | Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy | 김형석; 서주형; 박찬경, et al |
| 2005-04 | Three-Modal Size Distribution of Self-assembled InAs Quantum Dots | 이창명; 최석호; 노삼규, et al |
| 2000-12 | 반도체, 그 반세기의 역사와 미래 : 트랜지스터부터 양자 IC까지 | 김은규; 노삼규 |
| 2003-06 | 양자점 원적외선 수광소자 전망 | 이욱현; 강용훈; 엄준호, et al |
| 1998-12 | 저차원 반도체의 물리학과 응용 | 노삼규; 이정일 |
| 2000-01 | 질화물·탄화물 반도체의 응용과 연구개발 현황 | 노삼규; 김은규 |
