Browsing by Author 노삼규

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Showing results 1 to 18 of 18

Issue DateTitleAuthor(s)
2006-03Co Ion-implanted GaN and its Magnetic Properties김우철; 강희재; 오석근, et al
2003-10Doping density and operation voltage in qauntum dot IR photodetector이욱현; 강용훈; 엄준호, et al
2003-08Far-infrared photodetectors utilizing quantum structure semiconductors: technology trend and prospects송진동; 최원준; 이정일, et al
2004-03Growth characteristics of self-assembled InAs/GaAs quantum dots김형석; 서주형; 박찬경, et al
2004-03High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier이상준; 노삼규; 최정우, et al
2005-03In situ HREM study on the thermal stability of atomic layer epitaxy grown InAs/GaAs quantum dots김형석; J. H. Suh; 박찬경, et al
2006-03Magnetic and Structural Properties of Co Ion-Implanted GaN김우철; 강희재; 오석근, et al
2002-11Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing이창명; 노삼규; 이주인, et al
2004-08Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells이창명; 최석호; 김창수, et al
2003-05Photoluminescence of the AlGaN/GaN heterostructure and two-dimensional electron gas이창명; 반승일; 노삼규, et al
2006-07Structure and strain characteristics of self-assembled InAs/GaAs quantum dots investigated by transmission electron microscopy김형석; 서주형; 박찬경, et al
2005-08Structure and thermal stability of atomic layer epitaxy grown InAs/GaAs (001) quantum dots김형석; 서주형; 박찬경, et al
2005-11Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy김형석; 서주형; 박찬경, et al
2005-04Three-Modal Size Distribution of Self-assembled InAs Quantum Dots이창명; 최석호; 노삼규, et al
2000-12반도체, 그 반세기의 역사와 미래 : 트랜지스터부터 양자 IC까지김은규; 노삼규
2003-06양자점 원적외선 수광소자 전망이욱현; 강용훈; 엄준호, et al
1998-12저차원 반도체의 물리학과 응용노삼규; 이정일
2000-01질화물·탄화물 반도체의 응용과 연구개발 현황노삼규; 김은규

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