Browsing by Author 손창식

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Showing results 1 to 30 of 89

Issue DateTitleAuthor(s)
1998-10A study for the facet evolution of CCl4-doped Al0.5Ga0.5As/GaAs multilayers grown on patterned GaAs substrates by metalorganic chemical vapor deposition김효진; 손창식; 박영균, et al
1998-10Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy김제원; 손창식; 심선일, et al
1998-10Auger electron microscopy study of AlGaN grown by molecular beam epitaxy김제원; 손창식; 박영균, et al
1993-01Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.손창식; 김성일; 김용, et al
1996-01Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.손창식; 민병돈; 박만장, et al
1993-01Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.손창식; 김성일; 김용, et al
1997-10Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition손창식; 김성일; 김용, et al
1996-07CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질손창식; 김성일; 민병돈, et al
1994-01CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성김용; 손창식; 김성일, et al
2005-07Characteristics of Er-Implanted GaN손창식; 김성일; 김용태, et al
2004-12Characteristics of Vanadium-Tungsten-Oxide Bolometric Thin Films for Uncooled IR Detectors한용희; 최인훈; 문성욱, et al
1999-07Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy김제원; 손창식; 최인훈, et al
1996-08Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용, et al
1996-01Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition.손창식; 박만장; 민병돈, et al
2002-12Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD.손창식; 조신호; 최인훈, et al
1997-02Crystallographic orientation dependence of carbon incorporation into GaAs epilayers손창식; 김성일; 김용, et al
1997-04Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄손창식; 김성일; 김용, et al
1997-08Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4손창식; 김성일; 김용, et al
1997-12Dependence of electrical properties on the crystallographic orientation of CBr//4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition김성일; 민석기; 최인훈, et al
1997-05Dependence of the electrical properties of carbon-doped GaAs and AlGaAs epilayers on the surface crystallographica orientation손창식; 박영균; 이승백, et al
2004-12Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition손창식; 김상문; 김영환, et al
1997-10Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD박영균; 김성일; 김용, et al
1998-03Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs박영균; 손창식; 김성일, et al
1996-01Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition.손창식; 김성일; 민석기, et al
1996-08Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array김태근; 박정호; 김용, et al
1996-01Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs.손창식; 김성일; 김태근, et al
1996-01Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD.손창식; 김성일; 민병돈, et al
1996-01Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs.김성일; 손창식; 김태근, et al
1997-10Electrical and optical properties of quantum wire laserJ. C. Jang; 김성일; 황승민, et al
1996-01Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4.손창식; 김성일; 김은규, et al

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