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Showing results 1 to 30 of 70

Issue DateTitleAuthor(s)
2010-07-082형 양자우물을 포함하는 p형 반도체 소자 및 그 제조 방법.구현철; 김형준; 송진동, et al
1997-02A method of making a holographic screen using a retroreflex plate전형욱; 이혁수; 최용진, et al
2005-07A study of the cardiovascular aginig effect on the pulse shape신상훈; 임혜원; 박영재, et al
2004-12A study of the pu신상훈; 박영배; 임혜원, et al
2005-07A study of the pulse diagnosis research trend in China II: clinical application신상훈; 김기왕; 임혜원, et al
2011-08AlSb 화합물 반도체 유전함수의 온도의존성 연구정용우; 변준석; 황순용, et al
1999-12Analysis of viewing zone parameters by a full color transmission type holographic screens with a stereoscopic image projection반지은; 신상훈; 최용진, et al
2012-07Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model황순용; 김태중; 변준석, et al
2013-06Combine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS신상훈; 송진동
2010-09Dielectric functions and interband transitions of In1−J. J. Yoon; T. J. Kim; Y. W. Jung, et al
2013-11Dielectric functions of In1-xAlxSb alloys for arbitrary compositions with parametric modelingMangesh S. Diware; Tae Jung Kim; 윤재진, et al
2011-08Dielectric response of AlP by in-situ ellipsometry정용우; J.S. Byun; S.Y. Hwang, et al
2009-06Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry정용우; T. H. Ghong; J. S. Byun, et al
2007-12Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure신상훈; 임주영; 송진동, et al
2008-11Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures신상훈; 임주영; 송진동, et al
2005-08Electrical properties of ZnO:Al2O3 transparent conductive oxide thin film on polymer substrate신상훈; 김태훈; 김진혁, et al
2011-07Ellipsometric study of dielectric response of AlPSoon Yong Hwang; 정용우; Jun Seok Byun, et al
2014-08Ellipsometric Study of the Temperature Dependences of the Dielectric Function and the Critical Points of AlSb at Temperatures from 300 to 803 K박한결; 김태정; 황순영, et al
2010-04Formation of low density GaAs quantum dots by droplet epitaxy method이은혜; 송진동; 김수연, et al
2013-04Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device박윤호; 신상훈; 송진동, et al
2011-02Growth of 2dimensional hole gas (2DHG) with GaSb channel using III-V materials on InP substrate신상훈; 송진동; 한석희, et al
2010-08Growth of high quality InSb on InxAl1-xSb grading buffer on GaAs (x=1→0)신상훈; 송진동; 한석희, et al
2008-05Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs)송진동; 임주영; 신상훈, et al
2011-07GROWTH OF HIGH-QUALITY THIN InSb FILMS (<0.6 μm) GROWN ON GaAs SUBSTRATE WITH InxAl1-xSb CONTINUOUSLY GRADED BUFFER신상훈; 송진동; 김태근
2011-07Growth of Sb-based compound semiconductor nano structures for the application to high-speed electronics and infrared sensors송진동; 임주영; 신상훈, et al
2011-12Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures김희연; 류미이; 임주영, et al
2010-05Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs김희연; 오현지; 안상우, et al
2008-06High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs송진동; 김형준; 신상훈, et al
2008-12High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs신상훈; 송진동; 김수연, et al
1997-01Holographic transmission type screens for projection of the stereoscopic or multiview colour images신상훈; 김재순; 손정영, et al

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