Browsing by Author 신재철

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Showing results 1 to 30 of 41

Issue DateTitleAuthor(s)
2020-12An all chemical route to design a hybrid battery-type supercapacitor based on ZnCo2O4/CdS composite nanostructures최원준; Dipali S. Patil; Aviraj M. Teli, et al
2004-07Carrier dynamics in InGaAs dots-in-a-well structure formed by atomic-layer epitaxy박영민; 박용주; 김광무, et al
2012-04Characteristics of Strain-Induced InxGa1-xAs Nanowires Grown on Si(111) Substrates신재철; 최경진; 김도양, et al
2005-07Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector황성호; 신재철; 송진동, et al
2003-06Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs황성호; 신재철; 최원준, et al
2005-03Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment황성호; 신재철; 송진동, et al
2003-10Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication송진동; 박영민; 임재구, et al
2014-05Effect of Thermal Treatment on the Optical and the Structural Properties of In0.5Ga0.5As Quantum Dots최원준; 신재철; 최정우
2003-12Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy송진동; 박영민; 신재철, et al
2003-02Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique박영민; 박용주; 김광무, et al
2004-01Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique박영민; 박용주; 김광무, et al
2003-10Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique김지훈; 박용주; 박영민, et al
2003-08Enhancement of optical properties of self-assembled quantum dots for infra-red photo-detectors by thermal annealing황성호; 신재철; 송진동, et al
2003-06Experimental and theoretical analysis of detection wavelength tuning in quantum well infrared-photodetector by quantum well intermixing technique황성호; 신재철; 최원준, et al
2003-12Experimental and Theoretical Investigation of detection wavelength tuning in quantum well infrared-photodetectors by quantum well intermixing technique황성호; 신재철; 최원준, et al
2004-10Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy송진동; 박영민; 신재철, et al
2004-07Investigation of Detection Wavelength in Quantum Dot Infrared Photodetector황성호; 신재철; 송진동, et al
2015-11Investigation of detection wavelength of Quantum Well Infrared-Photodetector최원준; 송진동; 임주영, et al
2003-10Investigation of detection wavelength tuning in quantum well infrared-photodetectors by quantum well intermixing technique황성호; 신재철; 최원준, et al
2005-08Modification of the optical and electrical properties of quantum dot infrared photodetector (QDIP) by thermal treatment신재철; 최원준; 송진동, et al
2014-02Non-Lithographic Growth of Core-Shell GaAs Nanowires on Si for Optoelectronic Applications배명호; 김범규; 하동한, et al
2005-08Optical Properties of Quantum Dot Infrared Photodetector with Dot in an Asymmetric Well Structure임주영; 신재철; 송진동, et al
2004-07Photoluminescence and Electromodulation Study of InAs/GaAs Quantum Dots김성수; 정현식; 송진동, et al
2005-03Photovoltaic In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetector With Single-sided Al0.3Ga0.7As Layer황성호; 신재철; 송진동, et al
2004-09Photovoltaic InGaAs quantum dot infrared photodetector with single-sided AlGaAs layer황성호; 신재철; 최원준, et al
2018-05Quantum Dot Sensitized Solar Cells Based on TiO2/AgInS2최원준; Sachin A. Pawar; Jae Pil Jeong, et al
2003-08Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots송진동; Y. M. Park; J. G. Lim, et al
2015-06Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays신형욱; 이상준; 김두근, et al
2003-02Spectral response change in a quantum well infrared photodetector by using quantum well intermixing신재철; 최원준; 한일기, et al
2003-06Spectral response modification of quantum well infrared photodetector by quantum well intermixing.신재철; 최원준; 한일기, et al

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