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Showing results 1 to 27 of 27

Issue DateTitleAuthor(s)
2001-04A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment심현상; 김용태; 김동준, et al
2003-05A new atomic layer deposition of tungsten nitride diffusion barrier with NH₃ pulse plasma and WF6 gas김용태; 심현상; 김성일
2004-09A new atomic layer deposition of W_N thin films심현상; 박지호; 김용태
2003-10A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect심현상; 김성일; 전형탁, et al
2001-05Characteristic of tungsten nitride atomic layer deposition심현상; 김용태; 전형탁
2002-01Characteristics of plasma enhanced chemical vapor deposited W-B-N thin films김동준; 심현상; 김성일, et al
2002-08Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect심현상; 김용태; 전형탁
2002-07Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect.김용태; 심현상
2002-02Characteristics of W-N diffusion barrier by atomic layer chemical vapor deposition심현상; 김용태; 전형탁
2001-04Correlation between surface modification of HSQ films and phase transformation of Cu/W-N bilayers deposition on the NH3 plasma treated HSQ films김동준; 심현상; 박종완, et al
2001-10DI-WeM8 characteristics of tungsten nitride atomic layer deposition심현상; 김용태; H. Jeon
2000-06Digital deposition of tungsten nitride thin layer by cyclic exposure of WF//6 and NH₃심현상; 김동준; 김용태, et al
2000-01Digital deposition of tungsten nitride thin layer by sequential exposure of tung sten hexafluoride and ammonia심현상; 김동준; 김용태, et al
2000-05Effect of NH3 plasma treatment on improvement of reliability of W-B-N/HSQ thin films김동준; 심현상; 김용태, et al
2002-06Effects of NH₃ plasma treatment on methyl silsequioxane for copper multi-level interconnect심현상; 김용태; 전형탁
2002-12Electrical characteristics of Ir/atomic layer deposited ZrO ₂ /Si field effect transistors심현상; 심선일; 김용태
2003-05Electromigration characteristics of Al/W-N/LOW-k/Si submicron interconnect structure김용태; 심현상; 김성일
2000-06Enhancement of the electical and physical properties of Cu/W-N/HSQ interconnection scheme by NH₃ plasma treatment김동준; 심현상; 김용태, et al
1999-01Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation김동준; 김용태; 박영균, et al
2000-10Improvement in the characteristics of ammonia plasma treated MSQ(Methyl Silsesquioxane)심현상; 김동준; 김춘근, et al
2001-03Improvement of the reliability of a Cu/W-N/SiOF Multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film김동준; 심현상; 이세경, et al
2003-11Improvement of W-N diffusion barrier on silicon dioxide using pulse plasma atomic layer deposition심현상; 전형탁; 김성일, et al
2004-07Improvement of W-N films Using WF6 Pulse Plasma Atomic Layer Deposition심현상; 박지호; 김성일, et al
2003-08Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO₂ high-k dielectrics염민수; 심현상; 정형택, et al
2003-07Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect심현상; 김성일; 김용태
2001-05Structural and micromechanical characteristics of low-dielectric organosilicate thin films modified by NH₃ plasma treatment차국헌; 주상현; 김수한, et al
2002-04-08펄스 플라즈마 방전에 의한 박막 증착방법김성일; 김용태; 심현상, et al

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