Browsing by Author 안동호

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
2005-05A nonvolatile memory based on reversible phase changes between fcc and hcp안동호; 강대환; 정병기, et al
2006-09An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode강대환; 김인호; 정증현, et al
2006-02Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode강대환; 김인호; 정증현, et al
2006-04Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristics안동호; 이태연; 전현구, et al
2007-09High speed phase change random access memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 complete solid solution안동호; 이태연; 이동복, et al
2006-04Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode강대환; 김인호; 정증현, et al
2005-09Kinetic characteristics of FCC to hexagonal transformation in (Ge1Sb2Te4)0.8(Sn1Bi2Te4)0.2 chalcogenide alloy for phase change memory안동호; 김현미; 이민현, et al
2004-08Lower voltage operation of a phase change memory device with a highly resistive TiON layer강대환; 안동호; 권민호, et al
2004-09Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure강대환; 김태균; 정한주, et al
2004-11-29투명전도성 산화물 전극 접촉 재료를 갖는 상변화 메모리 셀강대환; 김기범; 김원목, et al

BROWSE