Browsing by Author 안형우

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Showing results 1 to 17 of 17

Issue DateTitleAuthor(s)
2016-08A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)정병기; 이수연; 조성원, et al
2013-07A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt안형우; 정두석; 정병기, et al
2009-09A study on the temperature dependence of characteristics of phase change memory devices이수연; 정두석; 정증현, et al
2010-01A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5이수연; 정두석; 정증현, et al
2010-04A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5이수연; 정두석; 정증현, et al
2009-01Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials정증현; 안형우; 이수연, et al
2014-04Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices서주희; 안형우; Sang-yeol Shin, et al
2007-09Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative정병기; 정증현; 이수연, et al
2013-07Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films안형우; 정두석; 정병기, et al
2013-07Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices김수동; 안형우; 신상열, et al
2010-04Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature우철; 이수연; 박영욱, et al
2010-04Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe우철; 박영욱; 안형우, et al
2012-04Numerical Study on passive crossbar arrays employing threshold switches as cell-selection-devices정두석; 안형우; 김수동, et al
2014-06Optical Properties of Amorphous Ge1-xSex and Ge1-x-ySexAsy Thin Films - Optical Gap Bowing and Phonon ModesHo Suk Lee; Hyeon Seob So; Hosun Lee, et al
2014-11The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se신상열; 최재민; 서주희, et al
2010-04The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe박영욱; 이현석; 안형우, et al
2010-01The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe박영욱; 이현석; 안형우, et al

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