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Showing results 1 to 16 of 16

Issue DateTitleAuthor(s)
2009-09A study on the temperature dependence of characteristics of phase change memory devices이수연; 정두석; 정증현, et al
2010-01A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5이수연; 정두석; 정증현, et al
2010-04A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5이수연; 정두석; 정증현, et al
2007-09Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative정병기; 정증현; 이수연, et al
2011-10Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe우철; 장강; 박영욱, et al
2009-02Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb:Te ratio정증현; 이현석; 이수연, et al
2010-09Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe장강; 우철; 박영욱, et al
2007-04Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory정증현; 이수연; 우철, et al
2010-04Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature우철; 이수연; 박영욱, et al
2010-04Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe우철; 박영욱; 안형우, et al
2012-07Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys강태동; 심경익; 김재훈, et al
2007-04Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory Material우철; 이수연; 정증현, et al
2012-10Modified wirte-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe장강; 우철; 정증현, et al
2011-03Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe장강; 우철; 정증현, et al
2010-04The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe박영욱; 이현석; 안형우, et al
2010-01The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe박영욱; 이현석; 안형우, et al

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