Browsing by Author 이수연

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Showing results 1 to 30 of 71

Issue DateTitleAuthor(s)
2015-05A new simple method for point contact Andreev reflection (PCAR) using a self-aligned atomic filament in transition-metal oxides황인록; 이근동; 진현우, et al
2008-05A novel programming method to refresh a long-cycled phase change memory cell이수연; 정증현; 이택성, et al
2009-05A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling이수연; 정증현; 이택성, et al
2016-08A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)정병기; 이수연; 조성원, et al
2013-07A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt안형우; 정두석; 정병기, et al
2009-09A study on the temperature dependence of characteristics of phase change memory devices이수연; 정두석; 정증현, et al
2010-01A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5이수연; 정두석; 정증현, et al
2010-04A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5이수연; 정두석; 정증현, et al
2009-01Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials정증현; 안형우; 이수연, et al
2014-04Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices서주희; 안형우; Sang-yeol Shin, et al
2008-06Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programming이수연; 정증현; 이택성, et al
2007-09Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative정병기; 정증현; 이수연, et al
2009-09Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy정두석; 이수연; 정증현, et al
2007-10Characterization of Superresolution Effects of Te-based Chalcogenide Thin Films at Blue Light Regime이현석; 이택성; 최지훈, et al
2009-02Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb:Te ratio정증현; 이현석; 이수연, et al
2011-03Dc current transport behavior in amorphous GeSe films정두석; 박군호; 임형광, et al
2008-09Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming이수연; 정증현; 박영욱, et al
2009-05Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe이수연; 정증현; 오철, et al
2007-04Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory정증현; 이수연; 우철, et al
2013-07Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films안형우; 정두석; 정병기, et al
2013-07Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices김수동; 안형우; 신상열, et al
2015-02EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se filmsYong Gyu Choi; Sang Yeol Shin; Roman Golovchak, et al
2012-10Fast and scalable memory characteristics of Ge-doped SbTe phase change materials정병기; 이수연; 정증현, et al
2012-08Fractionally δ-doped Oxide Superlattices for Higher Carrier MobilitiesWoo Seok Choi; 이수연; Valentino R. Cooper, et al
2015-05High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layerXiaochi Liu; E. H. Hwang; 유원종, et al
2015-11High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD)진현우; 김광천; 서주희, et al
2012-09High rectification and photovoltaic effect in oxide nano-junctionsT. Choi; L. Jiang; 이수연, et al
2016-02Implication of mesoporous 3-D graphene skeleton platform based on interconnected framework architecture in constructing electro-conductive flexible nanocomposites이상수; 신근영; 이수연
2010-04Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature우철; 이수연; 박영욱, et al
2007-10Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTe이택성; 이현석; 최지훈, et al