| 2015-05 | A new simple method for point contact Andreev reflection (PCAR) using a self-aligned atomic filament in transition-metal oxides | 황인록; 이근동; 진현우, et al |
| 2008-05 | A novel programming method to refresh a long-cycled phase change memory cell | 이수연; 정증현; 이택성, et al |
| 2009-05 | A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling | 이수연; 정증현; 이택성, et al |
| 2016-08 | A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS) | 정병기; 이수연; 조성원, et al |
| 2013-07 | A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt | 안형우; 정두석; 정병기, et al |
| 2009-09 | A study on the temperature dependence of characteristics of phase change memory devices | 이수연; 정두석; 정증현, et al |
| 2010-01 | A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 | 이수연; 정두석; 정증현, et al |
| 2010-04 | A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5 | 이수연; 정두석; 정증현, et al |
| 2009-01 | Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials | 정증현; 안형우; 이수연, et al |
| 2014-04 | Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices | 서주희; 안형우; Sang-yeol Shin, et al |
| 2008-06 | Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programming | 이수연; 정증현; 이택성, et al |
| 2007-09 | Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative | 정병기; 정증현; 이수연, et al |
| 2009-09 | Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy | 정두석; 이수연; 정증현, et al |
| 2007-10 | Characterization of Superresolution Effects of Te-based Chalcogenide Thin Films at Blue Light Regime | 이현석; 이택성; 최지훈, et al |
| 2009-02 | Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb:Te ratio | 정증현; 이현석; 이수연, et al |
| 2011-03 | Dc current transport behavior in amorphous GeSe films | 정두석; 박군호; 임형광, et al |
| 2008-09 | Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming | 이수연; 정증현; 박영욱, et al |
| 2009-05 | Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe | 이수연; 정증현; 오철, et al |
| 2007-04 | Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory | 정증현; 이수연; 우철, et al |
| 2013-07 | Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films | 안형우; 정두석; 정병기, et al |
| 2013-07 | Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices | 김수동; 안형우; 신상열, et al |
| 2015-02 | EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se films | Yong Gyu Choi; Sang Yeol Shin; Roman Golovchak, et al |
| 2012-10 | Fast and scalable memory characteristics of Ge-doped SbTe phase change materials | 정병기; 이수연; 정증현, et al |
| 2012-08 | Fractionally δ-doped Oxide Superlattices for Higher Carrier Mobilities | Woo Seok Choi; 이수연; Valentino R. Cooper, et al |
| 2015-05 | High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layer | Xiaochi Liu; E. H. Hwang; 유원종, et al |
| 2015-11 | High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD) | 진현우; 김광천; 서주희, et al |
| 2012-09 | High rectification and photovoltaic effect in oxide nano-junctions | T. Choi; L. Jiang; 이수연, et al |
| 2016-02 | Implication of mesoporous 3-D graphene skeleton platform based on interconnected framework architecture in constructing electro-conductive flexible nanocomposites | 이상수; 신근영; 이수연 |
| 2010-04 | Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature | 우철; 이수연; 박영욱, et al |
| 2007-10 | Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTe | 이택성; 이현석; 최지훈, et al |
