Browsing by Author 이주천

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Showing results 1 to 13 of 13

Issue DateTitleAuthor(s)
1994-08Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4김용; 김성일; 김무성, et al
1993-01Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.김용; 김성일; 엄경숙, et al
1991-02Dislocation accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by MOCVD.김용; 김무성; 이주천, et al
1990-11Electric-field-enhanced dissociation of the hydrogen-Si donor complex in GaAs.김은규; 조훈영; 민석기, et al
1993-08Electrical characteristics of carbon-doped GaAs.김용; 김성일; 김무성, et al
1993-01Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grown by low-pressure metalorganic chemical vapor deposition김성일; 김무성; 민석기, et al
1993-01Fast solid-phase crystallization of amorphous silicon films on glass using low-temperature multi-step rapid thermal annealing.김용태; 이창우; 이주천
1993-12Hall mobility and temperature dependent photoluminescence of carbon-doped GaAs.김용; 김성일; 김무성, et al
1994-01Performance of the plasma deposited tungsten nitride barrier to prevent the interdiffusion of Al and Si.김용태; 이창우; 이주천, et al
1990-07Selenium and silicon delta-doping properties of GaAs by atmospheric MOCVD김용; 김무성; 유경화, et al
1990-04Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.김용; 김무성; 이현우, et al
1994-01TEM studies of plasma deposited tungsten and tungsten nitride barriers for thermally stable metallization.김용태; 이창우; 민석기, et al
1989-10X-ray and DLTS characterization of In//xGa//1//-//xAs/GaAs layers grown by VPE using an In/Ga alloy source.김은규; 김현수; 민석기, et al