Browsing by Author 이희택

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Showing results 1 to 15 of 15

Issue DateTitleAuthor(s)
1999-11Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer최원준; 이희택; 우덕하, et al
2000-01Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers이희택; 조재원; 최원준, et al
2004-09Dependence of the Intermixing in InGaAs/InGaAsP Quantum Well on Capping Layer최원준; 이희택; 이정일, et al
2000-05Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer최원준; 이희택; 우덕하, et al
2000-03Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer최원준; 이희택; 우덕하, et al
2003-10Dependence of the intermixing of InGaAs/InGaAsP quantum well on NH₃ flow rate for the growth of SiNx capping layer최원준; 이희택; 우덕하, et al
2002-12Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers조재원; 이희택; 최원준, et al
2000-09Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure이희택; 최원준; 우덕하, et al
1999-01Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure.이희택; 최원준; 우덕하, et al
1999-01Effect of dielectric-semiconductor capping layer combinations on the dielectric cap quantum well disordering of InGaAs/InGaAsP single quantum well structure이희택; 최원준; 우덕하, et al
2000-09Impurity free vacancy disordering of an InGaAsP quantum-well structure by using SiN//x film prepared by plasma enhanced chemical vapor deposition최원준; 이희택; 우덕하, et al
1999-01SiNx 덮개층의 성장조건이 InGaAs/InGaAsP 양자우물 무질서화에 미치는 영향최원준; 이희택; 우덕하, et al
2000-02-07양자우물 구조를 갖는 반도체 광소자의 밴드갭 제어방법강광남; 김선호; 김회종, et al
1999-10-12양자우물 무질서화 기술에서 유전체-반도체 덮개층 조합에 의한 InGaAs/InGaAsP 양자우물 밴드갭의 조작방법강광남; 김선호; 김회종, et al
2000-02유전체덮개 양자우물 무질서공정에서 SiNx 덮개층 성장시 NH3 유량비 조절을 통한 InGaAs/InGaAsP 양자우물의 밴드갭 조절최원준; 이희택; 우덕하, et al

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