Browsing by Author 임주영

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Showing results 1 to 30 of 54

Issue DateTitleAuthor(s)
2010-04A nano-patterning technique utilizing surface GaAs clusters as a mask for mesa structure fabrication하승규; 송진동; 임주영, et al
2010-02AlGaAs 위에 성장한 저밀도 InAs/AlGaAs 양자점조남기; 하승규; 박성준, et al
2006-03Anomalous effect of hydrogenation on the optical characterization In0.5Ga0.5As/GaAs quantum dot infrared photodetectors임주영; 송진동; 최원준, et al
2006-07Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes임주영; 남형도; 송진동, et al
2009-10Characterization of individual GaAs droplet QDs하승규; 사미르 보누아흐; 파브리스 도나티니, et al
2009-09Characterization of individual GaAs droplet QDs by cathodo- and photoluminescence하승규; 사미르 보누아흐; 파브리스 도나티니, et al
2007-08Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode김광웅; 정경욱; 유성필, et al
2009-08Droplet epitaxy 방법으로 형성된 저밀도 GaAs 양자점의 광발광 및 음극선발광 특성분석하승규; 임주영; 송진동, et al
2007-12Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure신상훈; 임주영; 송진동, et al
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy유성필; 조남기; 임주영, et al
2009-10Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots유성필; 조남기; 임주영, et al
2010-02Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate임주영; 송진동; 최원준, et al
2009-10Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density유성필; 조남기; 임주영, et al
2012-08Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs임주영; 송진동; 양해석
2008-11Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures신상훈; 임주영; 송진동, et al
2014-04Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer오현지; 박성준; 임주영, et al
2010-04Formation of low density InAs QDs in indirect bandgap Al(Ga)As matrix (λ~790nm)조남기; 하승규; 박성준, et al
2007-08GaAs기판상에 나노 구조를 이용하여 격자상수차이를 극복하여 성장된 1um 두께의 고품질 InSb (47,000cm2/Vs)송진동; 임주영; 최원준, et al
2011-07Growth and characteristics of AlGaAs/GaAs multi quantum well on Si박성준; 임주영; 오현지, et al
2011-01Growth and characterization of low density droplet GaAs quantum dots for single photon sources하승규; 송진동; 임주영, et al
2011-10Growth of GaAs on Si substrate using InAs defect reduction layer최원준; 조남기; 임주영, et al
2011-09Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots임주영; 송진동; 최원준, et al
2008-05Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs)송진동; 임주영; 신상훈, et al
2011-07Growth of Sb-based compound semiconductor nano structures for the application to high-speed electronics and infrared sensors송진동; 임주영; 신상훈, et al
2010-04Growth of three-dimensional InAs islands on (001) Si Substrate임주영; 조남기; 송진동, et al
2011-12Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures김희연; 류미이; 임주영, et al
2010-05Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs김희연; 오현지; 안상우, et al
2008-07InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor송진동; 김형준; 임주영, et al
2008-08InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor송진동; 김형준; 임주영, et al
2020-03Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes장준연; 송진동; 장혜정, et al