| 2006-05 | 3rd order nonlinear optical properties of Au:SiO2 nanocomposite films with varying Au particle size | 전희선; 이경석; 윤승현, et al |
| 2003-11 | A Material Development Toward Long Cyclic Super-resolution Readout and Writing | 정병기; 이현석; 이택성, et al |
| 1998-12 | A molecular dynamics study on the liquid-amorphous-crystalline transition in a lennard-jonesian FCC system: I. bulk crystal | 장현구; 김순광; 정병기, et al |
| 1998-12 | A molecular dynamics study on the liquid-amorphous-crystalline transition in a lennard-jonesian FCC system: II. nanocrystalline plates. | 장현구; 김순광; 정병기, et al |
| 1998-02 | A molecular dynamics study on the liquid-amorphous-crystalline transition in nanocrystalline plates | 정병기; 김원목; 정문교, et al |
| 1999-11 | A new approach for super-resolution material | 김원목; 송기봉; 이택성, et al |
| 2005-05 | A nonvolatile memory based on reversible phase changes between fcc and hcp | 안동호; 강대환; 정병기, et al |
| 2001-04 | A novel approach to obtain GeSbTe-based high speed crystallizing materials for phase change optical recording | 이태연; 정병기; 이택성, et al |
| 2008-05 | A novel programming method to refresh a long-cycled phase change memory cell | 이수연; 정증현; 이택성, et al |
| 2005-04 | A semiconducting thermooptic material for potential application to super-resolution optical data storage | 이현석; 정병기; 이택성, et al |
| 1997-01 | A simulation study on the melting of nanocrystalline plates and spherical clusters | 이종길; 정병기; 김원목, et al |
| 2011-05 | A single element phase change memory | 이상현; 김문경; 정병기, et al |
| 2009-05 | A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling | 이수연; 정증현; 이택성, et al |
| 2016-08 | A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS) | 정병기; 이수연; 조성원, et al |
| 2013-07 | A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt | 안형우; 정두석; 정병기, et al |
| 2009-09 | A study on the temperature dependence of characteristics of phase change memory devices | 이수연; 정두석; 정증현, et al |
| 2010-01 | A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 | 이수연; 정두석; 정증현, et al |
| 2010-04 | A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5 | 이수연; 정두석; 정증현, et al |
| 2005-11 | An Experimental Analysis of the Thermo-optic Characteristics of PbTe Thin Films by a Real Time Electrical-Optical Characterization | 이현석; 이택성; 정증현, et al |
| 2006-05 | An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin films | 이현석; 이택성; 정증현, et al |
| 2006-09 | An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode | 강대환; 김인호; 정증현, et al |
| 2005-11 | An NSOM measurement of the near-field intensity profile of transmitted light due to a PbTe thin film material for super-resolution optical memory | 이택성; 이현석; 정증현, et al |
| 2009-01 | Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials | 정증현; 안형우; 이수연, et al |
| 2000-06 | Analysis of read-out signals in land/groove recording of a phase-change optical disc | 정문교; 정경민; 이택성, et al |
| 2006-09 | Analysis of the Optical Near-field due to PbTe Thin Films for Super-resolution Optical Memory | 이택성; 이현석; 김원목, et al |
| 2004-07 | Annealing effect of Zn-Sn-O films deposited using combinatorial method | 고지훈; 김인호; 김동환, et al |
| 2014-04 | Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices | 서주희; 안형우; Sang-yeol Shin, et al |
| 1994-01 | Bain strain relaxation during early stage decomposition of a hyper-eutectoid CuBe alloy. | 정병기; D. E. Laughlin; K. Hono |
| 2008-06 | Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programming | 이수연; 정증현; 이택성, et al |
| 2008-04 | Characteristics of hydrogen co-doped ZnO:Al thin films | 이승훈; 이택성; 이경석, et al |
