Browsing by Author 황철성

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Showing results 1 to 30 of 54

Issue DateTitleAuthor(s)
2008-102차원 압축변형의 방향 및 크기에 따른 Ge 공공 형성에 관한 제일원리계산최정혜; 나광덕; 이승철, et al
2012-06Ab initio calculations on the atomic and electronic structures of oxygen-doped hexagonal Ge2Sb2Te5김세진; 이주휘; 이승철, et al
2013-12Ab initio study on the structural characteristics of amorphous Zn2SnO4이주휘; 강영호; 한승우, et al
2011-06Ab-initio phonon calculations on ZnSnO phases이주휘; 이승철; 황철성, et al
2016-02Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors송슬지; 김유진; 박민혁, et al
2015-07Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage전우진; 라상호; 이웅규, et al
2016-09Atomic and electronic structures of a-ZnSnO3/a-SiO2 interface by ab initio molecular dynamics simulations최정혜; 박재홍; 이주휘, et al
2011-06Behaviors of nitrogen in crystalline Ge2Sb2Te5김세진; 이주휘; 이승철, et al
2009-09Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy정두석; 이수연; 정증현, et al
2011-03Dc current transport behavior in amorphous GeSe films정두석; 박군호; 임형광, et al
2013-10Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor라상호; 김언기; 정지심, et al
2014-10Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn2SnO4이주휘; 강영호; 황철성, et al
2009-10Effects of direction and magnitude of the biaxial strain on the vacancy formation in Ge by using Ab-initio calculations최정혜; 나광덕; 이승철, et al
2011-08Effects of magnitude and direction of the biaxial compressive strain on the formation and migration of a vacancy in Ge by using density functional theory이주휘; 나광덕; 이승철, et al
2013-07Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors임형광; 장호원; 이도권, et al
2012-07Emerging memories: resistive switching mechanisms and current status정두석; Reji Thomas; R. S. Katiyar, et al
2009-05Fabrication of Gd2O3-Doped CeO2 Thin Films for Single-Chamber-Type Solid Oxide Fuel Cells and Their Characterization최선희; 황철성; 이해원, et al
2006-05First-pinciples Study of Point Defects in Rutile TiO2-x조은애; 한승우; 안효신, et al
2010-04First-principles calculations on the formation and migration of the vacancy in strained Ge이주휘; 최정혜; 이승철, et al
2010-09First-principles study on the formation of a vacancy in Ge under biaxial compressive strain최정혜; 나광덕; 이승철, et al
2009-09First-principles study on the vacancy formation in Ge under biaxial compressive strain최정혜; 나광덕; 이승철, et al
2008-07First-principles Study on Vacancy in Ge under Biaxial Strain최정혜; 나광덕; 황철성, et al
2010-09Formation and migration of a vacancy in Ge under biaxial compressive strain by first-principles calculations이주휘; 나광덕; 최정혜, et al
2014-04Freestanding Micro-SOFCs with Electrodes Prepared by Electrostatic Spray Deposition최선희; 김상우; 황철성, et al
2016-01Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure김유진; 박민혁; 이영환, et al
2010-07Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer나광덕; 김정환; 박태주, et al
2006-05Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors박재후; 박태주; 조문주, et al
2008-10Microfabrication of thin film SOFC with 3D microperiodic porous electrodes최선희; 황철성; 이종호, et al
2012-02Migration of nitrogen in hexagonal Ge2Sb2Te5: An ab-initio study김세진; 이주휘; 이승철, et al
2011-06Nanofilamentary resistive switching in binary oxide system김경민; 정두석; 황철성

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