Browsing byAuthorBowers, John E.

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 18 of 18

Issue DateTitleAuthor(s)
2019-03-011.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on SiliconDuan, Jianan; Huang, Heming; Dong, Bozhang; Jung, Daehwan; Norman, Justin C.; Bowers, John E.; Grillot, Frederic
2019-04A Review of High-Performance Quantum Dot Lasers on SiliconNorman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wan, Yating; Liu, Songtao; Shang, Chen; Herrick, Robert W.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.
2019-05Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si SubstrateHuang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.; Chen, Baile
2020-09-21Defect filtering for thermal expansion induced dislocations in III-V lasers on siliconSelvidge, Jennifer; Norman, Justin; Hughes, Eamonn T.; Shang, Chen; Jung, Daehwan; Taylor, Aidan A.; Kennedy, M. J.; Herrick, Robert; Bowers, John E.; Mukherjee, Kunal
2019-02Degradation mechanisms of InAs quantum dot 1.3 mu m laser diodes epitaxially grown on siliconBuffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Meneghini, Matteo; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Norman, Justin
2021-02Degradation of 1.3 mu m InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot LayersBuffolo, Matteo; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
2020-02Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processesBuffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Meneghini, Matteo; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Norman, Justin
2020-09-01Effect of p-doping on he intensity noise of epitaxial quantum dot lasers on siliconDuan, Jianan; Zhou, Yueguang; Dong, Bozhang; Huang, Heming; Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wang, Cheng; Bowers, John E.; Grillot, Frederic
2020-02Epitaxial integration of high-performance quantum-dot lasers on siliconNorman, Justin C.; Bowers, John E.; Wan, Yating; Zhang, Zeyu; Shang, Chen; Selvidge, Jennifer G.; Dumont, Mario; Kennedy, M. J.; Jung, Daehwan; Duan, Jianan; Huang, Heming; Herrick, Robert W.; Grillot, Frederic; Gossard, Arthur C.; Liu, Songtao
2024-02Gradual degradation in InAs quantum dot lasers on Si and GaAsHughes, Eamonn T.; Shang, Chen; Selvidge, Jennifer; Jung, Daehwan; Wan, Yating; Herrick, Robert W.; Bowers, John E.; Mukherjee, Kunal
2019-10High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon SubstrateLiu, Songtao; Norman, Justin; Dumont, Mario; Jung, Daehwan; Torres, Alfredo; Gossard, Arthur C.; Bowers, John E.
2019-07-15III-V on silicon avalanche photodiodes by heteroepitaxyYuan, Yuan; Jung, Daehwan; Sun, Keye; Zheng, Jiyuan; Jones, Andrew H.; Bowers, John E.; Campbell, Joe C.
2020-03Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on SiliconBuffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
2019-11Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth ApplicationsZhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E.
2019-06Physical Origin of the Optical Degradation of InAs Quantum Dot LasersBuffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
2020-07-14Recombination-enhanced dislocation climb in InAs quantum dot lasers on siliconMukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; Norman, Justin; Taylor, Aidan A.; Salmon, Mike; Liu, Alan Y.; Bowers, John E.; Herrick, Robert W.
2019-03-11Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strainVega-Flick, Alejandro; Jung, Daehwan; Yue, Shengying; Bowers, John E.; Liao, Bolin
2019-12The Importance of p-Doping for Quantum Dot Laser on Silicon PerformanceNorman, Justin C.; Zhang, Zeyu; Jung, Daehwan; Shang, Chen; Kennedy, M. J.; Dumont, Mario; Herrick, Robert W.; Gossard, Arthur C.; Bowers, John E.

BROWSE