| 1989-10-01 | A RELATION BETWEEN EL2 (EC-0.81 EV) AND EL6 (EC-0.35 EV) IN ANNEALED HB-GAAS BY HYDROGEN PLASMA EXPOSURE | CHO, HY; KIM, EK; MIN, SK |
| 1988-09-05 | CREATION OF DEEP LEVELS IN HORIZONTAL BRIDGMAN-GROWN GAAS BY HYDROGENATION | CHO, HY; KIM, EK; MIN, SK; KIM, JB; JANG, J |
| 1990-03-01 | DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH |
| 1990-02-19 | DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING | CHO, HY; KIM, EK; KIM, Y; MIN, SK; YOON, JH; CHOH, SH |
| 1991-07-15 | DEEP LEVELS IN SI-COIMPLANTED AND BE-COIMPLANTED GAAS | CHO, HY; KIM, EK; MIN, SK |
| 1991-02 | DEEP LEVELS IN SI-IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING GAAS | LEE, HS; CHO, HY; KIM, EK; MIN, SK; KANG, TW; HONG, CY |
| 1990-08-15 | DEEP LEVELS IN UNDOPED BULK INP AFTER RAPID THERMAL ANNEALING | KIM, EK; CHO, HY; YOON, JH; MIN, SK; JUNG, YL; LEE, WH |
| 1990-02-01 | EFFECTS OF LEAKAGE CURRENT ON ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNALS FOR MIDGAP LEVELS IN GAAS | KIM, EK; CHO, HY; MIN, SK; CHOH, SH; NAMBA, S |
| 1990-11 | ELECTRIC-FIELD-ENHANCED DISSOCIATION OF THE HYDROGEN-SI DONOR COMPLEX IN GAAS | CHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, CC |
| 1991-04-29 | METASTABLE BEHAVIOR OF DEEP LEVELS IN HYDROGENATED GAAS | CHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, C |
| 1989-05-15 | PHOTOQUENCHING EFFECT AND THERMAL RECOVERY PROCESS FOR MIDGAP LEVELS IN GAAS - AN EL2 FAMILY IN GAAS | CHO, HY; KIM, EK; MIN, SK |
| 1992-02-15 | ROOM-TEMPERATURE HYDROGENATION EFFECT ON SI-ION-IMPLANTED AND BE-ION-IMPLANTED GAAS | CHO, HY; KIM, EK; LEE, HS; MIN, SK |
| 1992-05 | SCHOTTKY DIODE CHARACTERISTICS AND DEEP LEVELS ON HYDROGENATED N-TYPE GAAS | KIM, EK; CHO, HY; KIM, HS; MIN, SK; KIM, T |
