| 2006-05 | Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer | 손윤; H.C. Jeon; Y.S. Park, et al |
| 2005-08 | Diluted magnetic semiconductor of p-type InMnP:Zn epilayer | 손윤; H.C. Jeon; Y.S. Park, et al |
| 2004-07 | Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers | J.S. Kim; E.K. Kim; H. Hwang, et al |
| 2004-09 | Electrical charcaterization of InGaN/GaN quantum dots by deep level transient spectroscopy | J.S. Kim; E.K. Kim; H.J. Kim, et al |
| 2002-06 | Enhancement of optical properties of InGaAs/GaAs self-assembled quantum dots by thermal annealing with a SiNx/SiO ₂ capping layer | J.H. Lee; 최원준; 박용주, et al |
| 1997-01 | Gate passivation technique for modulation-doped-effect-transistors using electron beam lithography | B.H. Choi; 김회종; S.K. Jung, et al |
| 2002-09 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films. | J.H. Lee; 최원준; 박용주, et al |
| 2002-08 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing technique | J.C. Shin; 최원준; 한일기, et al |
| 2002-08 | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO ₂ capping layers | J.H. Lee; 최원준; 박용주, et al |
