| - | Analysis of dynamic response characteristics of PRAM cell | Eun Tae Kim; Park Yu Jin; Minsoo Youm; Kim, Yong Tae |
| - | Ge-Te Chalcogenide Material for High-Speed Phase-Change Memory | Kim, Yong Tae; Kwon Young Suk; Eun Tae Kim; Choi In-Hoon |
| - | In situ transmission electron microscopy study of In-Sb-Te thin films | Kim Chung Soo; Eun Tae Kim; Jeong Yong Lee; Kim, Yong Tae |
| - | Microstructural analysis of in doped Ge-Sb-Te thin films using high voltage electron microscopy | Y. I. Kim; Eun Tae Kim; Jeong Yong Lee; Kim, Yong Tae |
| - | Microstructure alanysis of In-Sb-Te thin films deposited by RF magnetron sputtering | Kim Chung Soo; Eun Tae Kim; Jeong Yong Lee; Kim, Yong Tae |
| - | Microstructure, crystallization and melting temperatures of SexTe100-x thin films | Eun Tae Kim; Kim, Yong Tae |
| - | Possibility of Sb2Se1Te2 thin films for the application of phase change memory | Kim, Yong Tae; Eun Tae Kim |
| - | Single phase formation mechanism of SexTe100-x binary alloy confirmed by XRD and TEM method | Kim, Yong Tae; Eun Tae Kim |
| - | Transmission electron microscopy study on crystallization and phase separation of Sb-Se-Te ternary alloys | Jong Moon Yoon; Eun Tae Kim; Jeong Yong Lee; Kim, Yong Tae |
