| 2003-08 | Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jeong, JC; Han, IK |
| 2003-07 | CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasers | Heo, DC; Song, JD; Han, IK; Lee, JI; Jeong, JC; Kim, JM; Lee, YT |
| 2003-06 | Effects of the linewidth enhancement factor on filamentation in 1.55 mu m broad-area laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC; Cho, SH |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2001-03 | Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes | Han, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M |
| 2000-12 | Low frequency noise spectroscopy for Schottky contacts | Lee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC |
| 2003-09 | Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC |
