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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2014-05-15Atomic layer deposition of HfO2 thin films using H2O2 as oxidantChoi, Min-Jung; Park, Hyung-Ho; Jeong, Doo Seok; Kim, Jeong Hwan; Kim, Jin-Sang; Kim, Seong Keun
2014-02-15Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (<= 100 degrees C) using O-3 as an oxygen sourceKim, Jeong Hwan; Park, Tae Joo; Kim, Seong Keun; Cho, Deok-Yong; Jung, Hyung-Suk; Lee, Sang Young; Hwang, Cheol Seong
2010-07-01Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layerNa, Kwang Duk; Kim, Jeong Hwan; Park, Tae Joo; Song, Jaewon; Hwang, Cheol Seong; Choi, Jung-Hae
2006-05-01Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistorsPark, Jaehoo; Park, Tae Joo; Cho, Moonju; Kim, Seong Keun; Hong, Sug Hun; Kim, Jeong Hwan; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon; Jeong, Ranju; Choi, Jung-Hae
2013-10Study on the defects in metal-organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysisKim, Un Ki; Rha, Sang Ho; Kim, Jeong Hwan; Chung, Yoon Jang; Jung, Jisim; Hwang, Eun Suk; Lee, Joohwi; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
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