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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2008-11Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT StructuresShin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G.
2007-03-14Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dotsLee, S-W; Kim, T. G.; Hirakawa, K.; Kim, J. S.; Choi, S-H; Cho, H. Y.
2011Selectively Self-Assembled Single-Salled Carbon Nanotubes Using Only Photolithography Without Additional Chemical ProcessKim, K. H.; Kim, T. G.; Lee, S.; Jhon, Y. M.; Kim, S. H.; Byun, Y. T.
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