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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2024-04Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott LimitKim, Yeon Ho; Jiang, Wei; Lee, Donghun; Moon, Donghoon; Choi, Hyun-Young; Shin, June-Chul; Jeong, Yeonsu; Kim, Jong Chan; Lee, Jaeho; Huh, Woong; Han, Chang Yong; So, Jae-Pil; Kim, Tae Soo; Kim, Seong Been; Koo, Hyun Cheol; Wang, Gunuk; Kang, Kibum; Park, Hong-Gyu; Jeong, Hu Young; Im, Seongil; Lee, Gwan-Hyoung; Low, Tony; Lee, Chul-Ho
2023-06Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic ElectronicsHuh, Woong; Lee, Donghun; Jang, Seonghoon; Kang, Jung Hoon; Yoon, Tae Hyun; So, Jae-Pil; Kim, Yeon Ho; Kim, Jong Chan; Park, Hong-Gyu; Jeong, Hu Young; Wang, Gunuk; Lee, Chul-Ho
2021-09Remote modulation doping in van der Waals heterostructure transistorsLee, Donghun; Lee, Jea Jung; Kim, Yoon Seok; Kim, Yeon Ho; Kim, Jong Chan; Huh, Woong; Lee, Jaeho; Park, Sungmin; Jeong, Hu Young; Kim, Young Duck; Lee, Chul-Ho
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