| 2004-12 | Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution | Lee, CM; Choi, SH; Seo, JC; Lee, JI; Leem, JY; Han, IK |
| 2005-02 | Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier | Jung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK |
| 2005-02 | Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer | Cho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK |
| 2003-11 | Fermi-edge enhancement in the luminescence of the AlGaN/GaN heterostructure | Lee, CM; Ban, SI; Lee, JI; Lee, DH; Leem, JY; Han, IK |
| 2003-10 | Optical properties of GaAs/AlGaAs quantum dots grown by droplet epitaxy with post-growth annealing | Lee, CM; Lee, JI; Lee, DH; Leem, JY; Han, IK; Koguchi, N |
| 2002-11 | Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing | Lee, CM; Noh, SK; Lee, JI; Lee, DH; Leem, JY; Han, IK; Mano, T; Koguchi, N |
| 2002-09 | Optical properties of InGaN/GaN multiple quantum wells | Lee, JI; Lee, CM; Leem, JY; Lim, KS; Han, IK |
| 2005-02 | Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses | Yoon, JJ; Jung, SI; Park, HJ; Suh, HK; Jeon, MH; Leem, JY; Cho, ET; Lee, JI; Cho, HK; Mo, YG; Kim, JS; Son, JS; Hang, IK |
