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Browsing byAuthorMakoto Ishida

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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)
-A new ferroelectric gate structure for low power operation of non volatile memory devicesKim Yong Tae; 심선일; Kim Seong Il; 최훈상; 최인훈; Makoto Ishida
-Electrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si SubstrateHo Jung Chang; Kang Mo Suh; Park Ji Ho; Ho Sung Chang; Soon Chan Hong; Kim, Yong Tae; Makoto Ishida
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