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Browsing byAuthorNakane, Ryosho

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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2014-07-28Direct wafer bonding technology for large-scale InGaAs-on-insulator transistorsKim, SangHyeon; Ikku, Yuki; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung; Takenaka, Mitsuru; Takagi, Shinichi
2014-06-30Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistorsKim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
2014-05High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th TunabilityKim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
2014-03-17Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxationKim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
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