Browsing by Author Noriyuki Taoka

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Showing results 1 to 18 of 18

Issue DateTitleAuthor(s)
2012-031-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current densityRena Suzuki; Noriyuki Taoka; M. Yokoyama, et al
2011-03AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP InterfacesNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2011-12Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-07Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-04High Mobility CMOS Technologies using III-V/Ge Channels on Si platformShinichi Takagi; 김상현; Masafumi Yokoyama, et al
2011-10High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2012-06III?V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer BondingMasafumi Yokoyama; 김상현; Rui Zhang, et al
2012-10Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface propertiesRena Suzuki; Noriyuki Taoka; Masafumi Yokoyama, et al
2013-12Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2013-10Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2012-02In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2016-10Influence of interface traps inside the conduction band on the capacitance?voltage characteristics of InGaAs metal?oxide?semiconductor capacitors김상현; Noriyuki Taoka; Masafumi Yokoyama, et al
2011-12Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistorsRyo Iida; 김상현; Masafumi Yokoyama, et al
2011-06Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2011-01Self-Aligned Metal Source/Drain InxGa1-xAs n-Meta-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2012-05Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2011-09Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layersMasafumi Yokoyama; Ryo Iida; 김상현, et al
2013-08Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability김상현; Masafumi Yokoyama; Noriyuki Taoka, et al

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