Browsing by Author Osamu Ichikawa

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Showing results 1 to 16 of 16

Issue DateTitleAuthor(s)
2012-031-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current densityRena Suzuki; Noriyuki Taoka; M. Yokoyama, et al
2013-10Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2014-06Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors김상현; Masafumi Yokoyama; Ryosho Nakene, et al
2013-05Formation of III-V-On-Insulator Structures on Si by Direct Wafer BondingMasafumi Yokoyama; Ryo Iida; Yuki Ikku, et al
2015-07High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctionsMunetaka Noguchi; 김상현; Masafumi Yokoyama, et al
2013-04High Mobility CMOS Technologies using III-V/Ge Channels on Si platformShinichi Takagi; 김상현; Masafumi Yokoyama, et al
2014-04High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2013-10High-Performance InAs-On-Insulator n-MOSFETs with Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2012-06III?V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer BondingMasafumi Yokoyama; 김상현; Rui Zhang, et al
2012-10Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface propertiesRena Suzuki; Noriyuki Taoka; Masafumi Yokoyama, et al
2013-12Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2013-10Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2013-03Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacksC. Y. Chang; Masafumi Yokoyama; 김상현, et al
2012-02In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2014-03Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation김상현; Masafumi Yokoyama; Yuki Ikku, et al
2012-05Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al