Browsing by Author Ryo Iida

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Showing results 1 to 12 of 12

Issue DateTitleAuthor(s)
2011-03AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP InterfacesNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2011-12Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-07Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-05Formation of III-V-On-Insulator Structures on Si by Direct Wafer BondingMasafumi Yokoyama; Ryo Iida; Yuki Ikku, et al
2011-10High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-12Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2013-10Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2016-10Influence of interface traps inside the conduction band on the capacitance?voltage characteristics of InGaAs metal?oxide?semiconductor capacitors김상현; Noriyuki Taoka; Masafumi Yokoyama, et al
2011-12Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistorsRyo Iida; 김상현; Masafumi Yokoyama, et al
2011-06Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2011-01Self-Aligned Metal Source/Drain InxGa1-xAs n-Meta-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2011-09Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layersMasafumi Yokoyama; Ryo Iida; 김상현, et al

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