Browsing by Author Ryosho Nakane

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Showing results 1 to 14 of 14

Issue DateTitleAuthor(s)
2013-10Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2014-07Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors김상현; Yuki Ikku; Masafumi Yokoyama, et al
2011-12Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-07Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2011-10High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2014-04High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2013-10High-Performance InAs-On-Insulator n-MOSFETs with Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2012-02In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2014-03Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation김상현; Masafumi Yokoyama; Yuki Ikku, et al
2011-06Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2011-01Self-Aligned Metal Source/Drain InxGa1-xAs n-Meta-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2012-05Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2013-08Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability김상현; Masafumi Yokoyama; Noriyuki Taoka, et al
2014-04Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applicationsMinsoo Kim; Younghyun Kim; Masafumi Yokoyama, et al

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