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Showing results 1 to 8 of 8

Issue Date	Title	Author(s)
2014-02-25	Dielectric function and critical points of AlP determined by spectroscopic ellipsometry	Hwang, S. Y.; Kim, T. J.; Jung, Y. W.; Barange, N. S.; Park, H. G.; Kim, J. Y.; Kang, Y. R.; Kim, Y. D.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.
2010-09-13	Dielectric functions and interband transitions of In1-xAlxSb alloys	Yoon, J. J.; Kim, T. J.; Jung, Y. W.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D.
2011-09-01	Dielectric response of AlP by in-situ ellipsometry	Jung, Y. W.; Byun, J. S.; Hwang, S. Y.; Kim, Y. D.; Shin, S. H.; Song, J. D.
2009-06-08	Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry	Jung, Y. W.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D.
2008-11	Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures	Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G.
2013-03-11	Interband transitions and dielectric functions of InGaSb alloys	Kim, T. J.; Yoon, J. J.; Byun, J. S.; Hwang, S. Y.; Aspnes, D. E.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Barange, N. S.; Kim, J. Y.; Kim, Y. D.
2016-05-26	Memory characteristics of capacitors with poly-GaAs floating gates	Roh, I. P.; Kang, N. S.; Shin, S. H.; Oh, Y. T.; Kim, K. B.; Song, J. D.; Song, Y. H.
2012-05	Relationship between phase and generation mechanisms of THz waves in InAs	Jeong, H.; Shin, S. H.; Kim, S. Y.; Song, J. D.; Choi, S. B.; Lee, D. S.; Lee, J.; Jho, Y. D.

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