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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
-Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)Sun Il Shim; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae; Ho Jung Chang; Jung Ho Park
-Fabrication and characterization of Pt/SrBi2Ta2O9(SBT)/CeO2/Si metal ferroelectric insulator semiconductor field effect transistor (MFISFET) memory by using the inductively coupled plasma reactive ion etching (ICP RIE) processSun Il Shim; Jung Ho Park; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae
-Prepartion of field effect transistor with (Bi,La)Ti3O12 ferroelectric thin film gateKang Mo Suh; Ji Ho Park; Su Cheol Gong; Ho Jung Chang; Young Chul Chang; Sun Il Shim; Kim, Yong Tae
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