Browsing by Author Takenori Osada

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Showing results 1 to 7 of 7

Issue DateTitleAuthor(s)
2013-10Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2014-06Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors김상현; Masafumi Yokoyama; Ryosho Nakene, et al
2015-07High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctionsMunetaka Noguchi; 김상현; Masafumi Yokoyama, et al
2014-04High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2013-10High-Performance InAs-On-Insulator n-MOSFETs with Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology김상현; Masafumi Yokoyama; Ryosho Nakane, et al
2013-03Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacksC. Y. Chang; Masafumi Yokoyama; 김상현, et al
2014-03Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation김상현; Masafumi Yokoyama; Yuki Ikku, et al

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