Browsing by Author Takuya Hoshii

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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2012-031-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current densityRena Suzuki; Noriyuki Taoka; M. Yokoyama, et al
2011-03AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP InterfacesNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2012-10Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface propertiesRena Suzuki; Noriyuki Taoka; Masafumi Yokoyama, et al
2013-12Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al
2013-10Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistorsNoriyuki Taoka; Masafumi Yokoyama; 김상현, et al

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