Browsing byAuthorYi, H.T.

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Issue DateTitleAuthor(s)
1999-11Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layerChoi, W.J.; Yi, H.T.; Woo, D.H.; Lee, S.; Kim, S.H.; Kang, K.N.; Cho, J.

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