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Showing results 1 to 8 of 8

Issue DateTitleAuthor(s)
2024-01Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDsHuynh, Tuyen; Ngo, Tien Dat; Choi, Hyungyu; Choi, Minsup; Lee, Wonki; Nguyen, Tuan Dung; Tran, Trang Thu; Lee, Kwangro; Hwang, Jun Yeon; Kim, Jeongyong; Yoo, Won Jong
-Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTeZang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI
2017-11-13Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline FilmChoi, Min Sup; Cheong, Byung-ki; Ra, Chang Ho; Lee, Suyoun; Bae, Jee-Hwan; Lee, Sungwoo; Lee, Gun-Do; Yang, Cheol-Woong; Hone, James; Yoo, Won Jong
2015-05High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layerLiu, Xiaochi; Hwang, E. H.; Yoo, Won Jong; Lee, Suyoun; Cheong, Byung-ki
2014-02-05Highly Stretchable Piezoelectric-Pyroelectric Hybrid NanogeneratorLee, Ju-Hyuck; Lee, Keun Young; Gupta, Manoj Kumar; Kim, Tae Yun; Lee, Dae-Yeong; Oh, Junho; Ryu, Changkook; Yoo, Won Jong; Kang, Chong-Yun; Yoon, Seok-Jin; Yoo, Ji-Beom; Kim, Sang-Woo
2010-11Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory ApplicationZhang, Gang; Ra, Chang Ho; Li, Hua-Min; Shen, Tian-zi; Cheong, Byung-ki; Yoo, Won Jong
2012-10Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
2011-03Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
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