| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |
| 2004-06 | Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy | Kim, EK; Kim, JS; Hwang, H; Park, K; Yoon, E; Kim, JH; Park, IW; Park, YJ |
| 2004-07 | Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers | Kim, JS; Kim, EK; Hwang, H; Park, K; Yoon, E; Park, IW |
| 2004-10 | Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy | Kim, JS; Kim, EK; Kim, HJ; Yoon, E; Park, IW; Park, YJ |
| 2004-10 | The effects of strained sapphire(0001) substrate on the structural quality of GaN epilayer | Cho, YS; Kim, J; Park, YJ; Na, HS; Kim, HJ; Kim, HJ; Yoon, E; Kim, YW |
| 2005-02 | The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD | Park, K; Ahn, E; Jeon, YJ; Cheong, HM; Kim, JS; Kim, EK; Lee, J; Park, YJ; Lee, GD; Yoon, E |
| 2003-09 | Thickness effects on the pyroelectric properties of chemical-solution-derived Pb(Zr-0.3,Ti-0.7)O-3 thin films for the infra-red sensor devices | Yang, JS; Kim, SH; Park, DY; Yoon, E; Park, JS; Kim, TS; Kang, SG; Ha, J |
| 1999-12 | Visible photoluminescence at room temperature from a-Si : H films grown by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition | Joo, SJ; Lim, SH; Yoon, E; Choi, WC; Kim, EK; Marra, DC; Aydil, ES |
