| 1996-01 | Adsorbate interactions of Cu(II) in Cu(II)-exchanged K-L gallosilicate studied by CW and pulsed electron spin resonance | Yu, JS; Hong, SB; Kevan, L |
| 1997-03-21 | Copper(II) ionic species in Cu-II-exchanged K-offretite aluminosilicate and comparison with Cu-II-exchanged K-offretite gallosilicate determined by electron paramagnetic resonance and electron spin echo modulation spectroscopies | Yu, JS; Ryoo, JW; Lee, CW; Kim, SJ; Hong, SB; Kevan, L |
| 1997-12-07 | Cu-II location and adsorbate interaction in Cu-II-exchanged synthetic Na-omega gallosilicate - EPR and electron spin echo modulation studies | Yu, JS; Kim, JY; Lee, CW; Kim, SJ; Hong, SB; Kevan, L |
| 1997-01 | Cupric ion species in Cu(II)-exchanged gallosilicate K-L and comparison with aluminosilicate K-L | Yu, JS; Hong, SB; Kevan, L |
| 1996-07-25 | Cupric ion species in Cu(II)-exchanged K-offretite gallosilicate determined by electron spin resonance and electron spin echo modulation spectroscopies | Yu, JS; Ryoo, JW; Kim, SJ; Hong, SB; Kevan, L |
| 2003-02 | Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 1996-03-07 | EPR and electron spin echo modulation spectroscopy of Cu-II ion species in Cu-II-exchanged K-L gallosilicate | Yu, JS; Kim, SJ; Hong, SB; Kevan, L |
| 2005-02 | Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-02 | Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-04 | Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In-0.53(Ga0.6Al0.4)(0.47)As quantum well laser structure with InGaAlAs digital alloys by thermal annealing | Yu, JS; Song, JD; Kim, JM; Bae, SJ; Lee, YT; Lim, H |
| 2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2004-01 | Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers | Yu, JS; Song, JD; Kim, JM; Lee, YT; Lim, H |
