| 2021-07 | Channel Thickness-dependent Ambient Effects on the Operation of Multi Layer MoS2 Field-Effect Transistors | Park Chang Seon; CHANGWOO LEE; JUNG WON JUN; Min Park; Dong Su Lee; Hong Seok Lee; Dae-Young Jeon |
| 2021-02 | Comparative study on the intrinsic NO2 gas sensing capability of triarylamine-based amorphous organic semiconductors | Chae, Huijeong; Hwang, Sooji; Kwon, Ji Eon; Quang Bach Pham; Kim, Sung-Jin; Lee, Wi Hyoung; Kim, Bong-Gi |
| - | Fabrication of MoS2 Film-based Transistors with Graphene Electrodes | Park sung ik; Jinnil Choi; Jung da woon; Kim, Seong Il; Kim, Young-Hwan |
| 2019-05 | Field Effect Transistors Based on One-Dimensional, Metal-Oxide Semiconducting Nanofiber Mats | Yoo, Tae-Hee; Hwang, Do Kvung |
| 2019-10-05 | Formation of a functional homo-junction interface through ZnO atomic layer passivation: Enhancement of carrier mobility and threshold voltage in a ZnO nanocrystal field effect transistor | Kim, Youngjun; Chang, Mincheol; Cho, Seongeun; Kim, Minkyong; Kim, Hyunsik; Choi, Eunsoo; Ko, Hyungduk; Hwang, Jinha; Park, Byoungnam |
| 2018-11-01 | Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes | Yoo, Seolhee; Kim, Sangsig; Song, Yong-Won |
