| 2021-09 | Autothermal recirculating reactor (ARR) with Cu-BN composite as a stable reactor material for sustainable hydrogen release from ammonia | Arash, Badakhsh; Cha, Jun Young; Park, Yong ha; Lee, Yu Jin; Jeong, Hyang soo; Kim, Yong min; Sohn, Hyun tae; Nam, Suk Woo; YOON, CHANG WON; Park, C.W.; Jo, Young Suk |
| 2009-12-15 | Carrier transfer and redistribution dynamics in vertically aligned stacked In0.5Ga0.5As quantum dots with different GaAs spacer thicknesses | Kwack, Ho-Sang; Cho, Yong-Hoon; Song, Jin-Dong; Choi, Won-Jun; Lee, Jung-Il |
| 2009-06-08 | Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry | Jung, Y. W.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D. |
| 2009-05 | Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes | Jung, Se-Yeon; Seong, Tae-Yeon; Kim, Hyunsoo; Park, Kyung-Soo; Park, Jae-Gwan; Namgoong, Gon |
| 2021-09-27 | Enhancing the Efficiency of GaSb Photovoltaic Cell Using Thin-Film Multiscale Haze and Radiative Cooling | Gupta, P.; Kim, Y.; Im, J.; Kang, G.; Urbas, A.M.; Kim, K. |
| 2010-06-28 | High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure | Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il; Kim, Tae Geun |
| 2016-11 | III-V/Ge MOS device technologies for low power integrated systems | Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M. |
| 2009-08 | Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN | Jang, Ho Won; Lee, Sanghan; Ryu, Seong Wook; Son, Jun Ho; Song, Yang Hee; Lee, Jong-Lam |
| 2021-11-15 | Memory effect of vertically stacked hBN/QDs/hBN structures based on quantum-dot monolayers sandwiched between hexagonal boron nitride layer | Shim, J.; Lee, J.S.; Lee, J.H.; Yun, Y.J.; Park, S.K.; Angadi, B.; Son, D.I. |
| 2021-03-25 | Nanomechanical Microwave Bolometry with Semiconducting Nanowires | Kim, J.; Cha, J.; Kim, M.; Ryu, Y.; Park, S.I.; Song, J.D.; Suh, J. |
| 2009-07-01 | Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots | Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2010-07-05 | Spin-orbit coupling in double-sided doped InAs quantum well structures | Kim, Kyung-Ho; Kim, Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk-Hee |
| 2011-10-10 | Temperature-dependent energy band gap variation in self-organized InAs quantum dots | Yeo, Inah; Song, Jin Dong; Lee, Jungil |
| 2012-04-16 | Terahertz phase microscopy in the sub-wavelength regime | Yi, Minwoo; Lee, Kanghee; Song, Jin-Dong; Ahn, Jaewook |
| 2021-04-01 | Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method | So, B.; Lee, J.; Cheon, C.; Lee, J.; Choi, U.; Kim, M.; Song, J.; Chang, J.; Nam, O. |
