Browsing bySubjectIN0.53GA0.47AS CAP LAYER

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Issue DateTitleAuthor(s)
2003-02Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperaturesYu, JS; Song, JD; Lee, YT; Lim, H

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