Showing results 1 to 18 of 18
Issue Date | Title | Author(s) |
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2013-11-29 | Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model | Hwang, S. Y.; Kim, T. J.; Byun, J. S.; Barange, N. S.; Diware, M. S.; Kim, Y. D.; Aspnes, D. E.; Yoon, J. J.; Song, J. D. |
2011-05-15 | Anomalous strain profiles and electronic structures of a GaAs-capped InAs/In0.53Ga0.47As quantum ring | Moon, Pilkyung; Choi, Won Jun; Park, Kwangmin; Yoon, Euijoon; Lee, JaeDong |
2013-11-01 | Dielectric functions of In-1 (-) xAlxSb alloys for arbitrary compositions with parametric modeling | Diware, Mangesh S.; Kim, Tae Jung; Yoon, Jae Jin; Barange, Nilesh S.; Byun, Jun Seok; Park, Han Gyeol; Kim, Young Dong; Shin, Sang Hoon; Song, Jin Dong |
2009-09 | Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots | Ryu, Sung-Pil; Cho, Nam-Ki; Lim, Ju-Young; Rim, A-Ram; Choi, Won-Jun; Song, Jin-Dong; Lee, Jung-Il; Lee, Yong-Tak |
2009-09 | Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density | Ryu, Sung-Pil; Cho, Nam-Ki; Lim, Ju-Young; Lee, Hye-Jin; Choi, Won-Jun; Song, Jin-Dong; Lee, Jung-Il; Lee, Yong-Tak |
1999-03-01 | Ellipsometric study of self-assembled InAs/GaAs quantum dots | Lee, H; Seong, E; Kim, SM; Son, MH; Min, BD; Kim, Y; Kim, EK |
2011-11 | High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy | Ha, S. K.; Song, J. D.; Han, I. K.; Ko, D. Y.; Kim, S. Y.; Lee, E. H. |
2013-06-01 | Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon | Shin, Jae Cheol; Kim, Do Yang; Lee, Ari; Kim, Hyo Jin; Kim, Jae Hun; Choi, Won Jun; Kim, Hyun-Seok; Choi, Kyoung Jin |
2013-03-11 | Interband transitions and dielectric functions of InGaSb alloys | Kim, T. J.; Yoon, J. J.; Byun, J. S.; Hwang, S. Y.; Aspnes, D. E.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Barange, N. S.; Kim, J. Y.; Kim, Y. D. |
2009-09-14 | Interband transitions of InAsxSb1-x alloy films | Kim, T. J.; Yoon, J. J.; Hwang, S. Y.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D. |
2009-07-01 | Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots | Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
2008-04-14 | Optical properties of InxAl1-xAs alloy films | Yoon, J. J.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Aspnes, D. E.; Kim, H. J.; Chang, Y. C.; Song, J. D. |
1999-04 | Optical study of InAs/GaAs quantum dots using spectroscopic ellipsometry | Lee, H; Seong, EZ; Kim, SM; Son, MH; Min, BD; Kim, Y; Kim, EK |
2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
2015-08 | Polarized Terahertz Waves Emitted from In0.2Ga0.8As Nanowires | Yim, Jong-Hyuk; Irfan, Muhammad; Song, Kyoung-Jin; Lee, Eun-Hye; Song, Jin-Dong; Jho, Young-Dahl |
2000-02 | Spin-valve effects in a two-dimensional electron gas system | Gardelis, S; Smith, CG; Lee, WY; Barnes, CHW; Linfield, EH; Ritchie, DA; Bland, JAC |
2021-09-05 | Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110) | Kim, Hansung; Yeu, In Won; Han, Gyuseung; Ju, Gunwu; Lee, Yun Joong; Shin, Young-hun; Choi, Jung-Hae; Koo, Hyun Cheol; Kim, Hyung-jun |
2018-12 | SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE | Hussain, Laiq; Pettersson, Hakan; Wang, Qin; Karim, Amir; Anderson, Jan; Jafari, Mehrdad; Song, Jindong; Choi, Won Jun; Han, Il Ki; Lim, Ju Young |