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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxyRyu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G.
-Evidence of correlated electron hole pair in dot in asymmetric quantum well structureM.H.Abdellatif; SONG, JIN-DONG; Choi, Won Jun; Nam Ki Cho; Lee, Jung Il
2021-04-05Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 mu m emission enabled by ripening processChu, Rafael Jumar; Ahn, Dae-Hwan; Ryu, Geunhwan; Choi, Won Jun; Jung, Daehwan
2003-01Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cyclesKim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW
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