Browsing bySubjectInP MOSFETs

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Issue DateTitleAuthor(s)
2015-12-01Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealingJin, Hyun Soo; Cho, Young Jin; Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Yun, Dong-Jin; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo

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