Showing results 1 to 9 of 9
Issue Date | Title | Author(s) |
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2015-11-01 | 1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment | Sindhuri, V.; Son, Dong-Hyeok; Lee, Dong-Gi; Sakong, SungHwan; Jeong, Yoon-Ha; Cho, In-Tak; Lee, Jong-Ho; Kim, Yong-Tae; Cristoloveanu, Sorin; Bae, Youngho; Im, Ki-Sik; Lee, Jung-Hee |
2003-02 | Analytic model for photo-response of p-channel MODFET'S | Kim, HJ; Han, I; Choi, WJ; Park, YJ; Cho, WJ; Lee, JI; Kim, DM; Zimmermann, J |
2004-12 | Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A |
2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
2014-11 | Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation | Na, Junhong; Lee, Young Tack; Lim, Jung Ah; Hwang, Do Kyung; Kim, Gyu-Tae; Choi, Won Kook; Song, Yong-Won |
2002-02-25 | Investigation of noise sources in platinum silicide Schottky barrier diodes | Papatzika, S; Hastas, NA; Angelis, CT; Dimitriadis, CA; Kamarinos, G; Lee, JI |
1999-12 | On 1/f(gamma) noise in semiconductor devices | Lee, JI; Brini, J; Chovet, A; Dimitriadis, CA |
2008-07 | Physical understanding of the Hooge parameter in ZnO nanowire devices | Lee, Jungil; Han, Ilki; Yu, Byung-Yong; Yi, Gyu-Chul; Ghibaudo, Gerard |
2003-02 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | Han, I; Choi, WJ; Kim, HJ; Park, YJ; Cho, WJ; Lee, JI; Chovet, A; Brini, J |