Browsing bySubjectLOW-FREQUENCY NOISE

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Showing results 1 to 9 of 9

Issue DateTitleAuthor(s)
2015-11-011/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatmentSindhuri, V.; Son, Dong-Hyeok; Lee, Dong-Gi; Sakong, SungHwan; Jeong, Yoon-Ha; Cho, In-Tak; Lee, Jong-Ho; Kim, Yong-Tae; Cristoloveanu, Sorin; Bae, Youngho; Im, Ki-Sik; Lee, Jung-Hee
2003-02Analytic model for photo-response of p-channel MODFET'SKim, HJ; Han, I; Choi, WJ; Park, YJ; Cho, WJ; Lee, JI; Kim, DM; Zimmermann, J
2004-12Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dotsSong, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A
2007-09-01Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structuresArpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C.
2014-11Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current FluctuationNa, Junhong; Lee, Young Tack; Lim, Jung Ah; Hwang, Do Kyung; Kim, Gyu-Tae; Choi, Won Kook; Song, Yong-Won
2002-02-25Investigation of noise sources in platinum silicide Schottky barrier diodesPapatzika, S; Hastas, NA; Angelis, CT; Dimitriadis, CA; Kamarinos, G; Lee, JI
1999-12On 1/f(gamma) noise in semiconductor devicesLee, JI; Brini, J; Chovet, A; Dimitriadis, CA
2008-07Physical understanding of the Hooge parameter in ZnO nanowire devicesLee, Jungil; Han, Ilki; Yu, Byung-Yong; Yi, Gyu-Chul; Ghibaudo, Gerard
2003-02Simple model for 1/f noise in polycrystalline silicon thin-film transistorsHan, I; Choi, WJ; Kim, HJ; Park, YJ; Cho, WJ; Lee, JI; Chovet, A; Brini, J

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