| 1993-05 | A MOSFET TYPE SENSOR FOR OXYGEN SENSING USING LAF3 AS A GATE MATERIAL | CHOI, SK; YI, CW; CHO, WI; CHO, BW; JU, JB; YUN, KS; YAMAZOE, N |
| 1990-01 | A simple model for parasitic resistances of LDD MOSFETS. | 강광남; 이정일; 이명복; 윤경식 |
| 1992-01 | A simple model for second substrate current hump in LDD MOSFETs. | 강광남; 이정일; M. B. Lee; K. S. Yoon; S. Hong |
| 1989-01 | A study on the extraction of mobility reduction parameters in short channel n-MOSFETs at room temperature. | 강광남; 이명복; 이정일 |
| 1991-01 | A study on the parasitic resistance of a short channel MOSFETs with lightly doped drain structure. | 강광남; 이정일; 이명복; 윤경식 |
| 2021-12 | Cavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si | 강수석; Ahn, Dae hwa; 이인호; 최원준; SONG, JIN DONG; Han, Jae-Hoon |
| 1987-01 | Characterization of η -channel Ge MOSFETs with gate insulators formed by high pressure thermal oxidation. | 이정일; E. E. Crisman; P. J. Stiles; O. J. Gregory |
| 2018-03 | Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs | Im, Ki-Sik; Atmaca, Gokhan; Won, Chul-Ho; Caulmilone, Raphael; Cristoloveanu, Sorin; Kim, Yong-Tae; Lee, Jung-Hee |
| 2001-10 | Effect of dopants on cobalt silicidation behavior at metal-oxide-semiconductor field-effect transistor sidewall spacer edge | 김종채; Yeong-Cheol Kim; 김병국 |
| 1992-05-16 | EFFECTS OF CARRIER-VELOCITY SATURATION ON THE CHARACTERISTICS OF SHORT CHANNEL MOSFETS WITH LIGHTLY DOPED DRAINS | LEE, MB; LEE, JI; KANG, KN; YOON, KS; HONG, S; LIM, KY |
| 1991-01 | Effects of velocity saturation in the LDD region on the characteristics of short channel LDD MOSFETs. | 강광남; 이정일; 이명복; 윤경식; 임기영 |
| - | Gate voltage dependence parasitic resistence in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki |
| 2024-04 | Heavily Doped Channel Carrier Mobility in β -Ga 2 O 3 Lateral Accumulation MOSFET | Kuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; Ko, Kyul; Jeong, Jaeyong; Geum, Dae-Myeong; Han, Jae-Hoon; Park, Ji-Hyeon; Jeon, Dae-Woo; Kim, Sang-Hyeon |
| 2016-11 | III-V/Ge MOS device technologies for low power integrated systems | Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M. |
| 2003-08 | Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO2 high-k dielectrics | Youm, M; Sim, HS; Jeon, H; Kim, SI; Kim, YT |
| 1989-05-25 | MOBILITY REDUCTION PARAMETERS IN SHORT-CHANNEL MOSFETS | LEE, JI; LEE, MB; KANG, KN; PARK, KO |
| - | Optimization and characterization of 600V super junction power MOSFET using a deep trench structure | Kim, Yong Tae; Eun Sik Jung; Ey Goo Kang |
| 2007-07 | Parasitic bipolar junction transistors in a floating-gate MOSFET for fluorescence detection | Shin, Kyeong-Sik; Pack, Kyeong-Kap; Park, Jung-Ho; Kim, Tae-Song; Ju, Byeong-Kwon; Kang, Ji Yoon |
| - | Reduction of saturated transconductance in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee |
| 1990-01 | Reduction of transconductance in saturation region of short channel LDD NMOSFETs. | 강광남; 이명복; 이정일 |
| 1991-01 | Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors. | 강광남; 이정일; 이명복; S. Y. Lee; 윤경식 |
| 1993-03 | Simple Model for the Second Substrate Current Hump in Short-Channel LDD MOSFETs | LEE, MYOUNG BOG; 이정일; 강광남; K. S. Yoon; K. Y. Lim; H. Lim |
| 1993-01 | Simple Semi-Analytic Model for the Substrtate Current of Short Channel MOSFETs with Lightly Doped Drains | LEE, MYOUNG BOG; 이정일; 강광남; K. S. Yoon; K. Y. Lim; H. Lim |
| - | The characterization of MOSFET type photosenser for CMOS image sensor | K. S. Shin; K. K. Paek; Y. S. Lee; S. I. Kim; J. H. Park; LEE YUN HI; Ju Byeong Kwon |
| - | The characterization of the modified floating gate MOSFETs for photodetector | K. S. Shin; K. K. Paek; Y. S. Lee; LEE YUN HI; S. I. Kim; J. H. Park; Ju Byeong Kwon |
| 2015-08 | The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation | Srivastava, Pooja; Shin, Mincheol; Lee, Kwang-Ryeol; Mizuseki, Hiroshi; Kim, Seungchul |
| 1989-01 | The shift of threshold voltage and subthreshold current curve in LDD MOSFET degraded under difference DC stress-biases. | 강광남; 이명복; 이정일 |
| 2014-02 | Thermal analysis of self-heating in saddle MOSFET devices | Oh, Hyun Gon; Jeong, Cherlhyun; Cho, Il Hwan |
| - | Thin body n- and p-GaAs FET on Si for CMOS integration | Shim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun |
| - | Wafer Bonging Process for III-V MOSFET and Monolithic 3D Integration on Si Substrates | Kim Hyung-jun; Sanghyeon Kim |
