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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)
2018-05Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As ChannelKim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon
2006-09Low-frequency noise in high-k gate dielectric nanoscale MOSFETsHan, I. K.; Nam, H. D.; Choi, W. J.; Lee, J. I.; Szentpali, B.; Chovet, A.
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