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Issue DateTitleAuthor(s)
2021-11-15Memory effect of vertically stacked hBN/QDs/hBN structures based on quantum-dot monolayers sandwiched between hexagonal boron nitride layerShim, J.; Lee, J.S.; Lee, J.H.; Yun, Y.J.; Park, S.K.; Angadi, B.; Son, D.I.
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