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Issue DateTitleAuthor(s)
2016-10The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6Kil, Yeon-Ho; Yuk, Sim-Hoon; Kim, Joung Hee; Kim, Taek Sung; Kim, Yong Tae; Choi, Chel-Jong; Shim, Kyu-Hwan
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